Diodes Incorporated - DMN2016UFX-7

KEY Part #: K6522229

DMN2016UFX-7 Bei (USD) [307746pcs Hisa]

  • 1 pcs$0.12019

Nambari ya Sehemu:
DMN2016UFX-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET BVDSS 8V-24V V-DFN2050-4.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - FET, MOSFETs - RF ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN2016UFX-7 electronic components. DMN2016UFX-7 can be shipped within 24 hours after order. If you have any demands for DMN2016UFX-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2016UFX-7 Sifa za Bidhaa

Nambari ya Sehemu : DMN2016UFX-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET BVDSS 8V-24V V-DFN2050-4
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 24V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 9.9A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs : 15 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 950pF @ 10V
Nguvu - Max : 1.07W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 4-VFDFN Exposed Pad
Kifurushi cha Kifaa cha Mtoaji : V-DFN2050-4

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