Vishay Siliconix - SIB914DK-T1-GE3

KEY Part #: K6524227

[3902pcs Hisa]


    Nambari ya Sehemu:
    SIB914DK-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2N-CH 8V 1.5A PPAK SC75-6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Thyristors - TRIAC ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SIB914DK-T1-GE3 electronic components. SIB914DK-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIB914DK-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIB914DK-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SIB914DK-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2N-CH 8V 1.5A PPAK SC75-6
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Standard
    Kukata kwa Voltage Voltage (Vdss) : 8V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1.5A
    Njia ya Kutumia (Max) @ Id, Vgs : 113 mOhm @ 2.5A, 4.5V
    Vgs (th) (Max) @ Id : 800mV @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 2.6nC @ 5V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 125pF @ 4V
    Nguvu - Max : 3.1W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : PowerPAK® SC-75-6L Dual
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-75-6L Dual