SI4214DDY-T1-E3 Bei (USD) [241294pcs Hisa]
- 1 pcs$0.15405
- 2,500 pcs$0.15329
- Nambari ya Sehemu:
- SI4214DDY-T1-E3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 30V 8.5A 8SO.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - Arrays, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Viwango - Zener - Arrays and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI4214DDY-T1-E3 electronic components. SI4214DDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4214DDY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4214DDY-T1-E3 Sifa za Bidhaa
Nambari ya Sehemu :
SI4214DDY-T1-E3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 30V 8.5A 8SO
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8.5A
Njia ya Kutumia (Max) @ Id, Vgs :
19.5 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
22nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
660pF @ 15V
Nguvu - Max :
3.1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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