SQS966ENW-T1_GE3 Bei (USD) [218486pcs Hisa]
- 1 pcs$0.16929
- Nambari ya Sehemu:
- SQS966ENW-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CHAN 60V.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQS966ENW-T1_GE3 electronic components. SQS966ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS966ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS966ENW-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQS966ENW-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CHAN 60V
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
36 mOhm @ 1.25A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8.8nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
572pF @ 25V
Nguvu - Max :
27.8W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® 1212-8W
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8W
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