Vishay Siliconix - SI6975DQ-T1-GE3

KEY Part #: K6522260

SI6975DQ-T1-GE3 Bei (USD) [114503pcs Hisa]

  • 1 pcs$0.32464
  • 3,000 pcs$0.32302

Nambari ya Sehemu:
SI6975DQ-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2P-CH 12V 4.3A 8TSSOP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - JFETs, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI6975DQ-T1-GE3 electronic components. SI6975DQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6975DQ-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI6975DQ-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI6975DQ-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2P-CH 12V 4.3A 8TSSOP
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 P-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.3A
Njia ya Kutumia (Max) @ Id, Vgs : 27 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id : 450mV @ 5mA (Min)
Malango ya Lango (Qg) (Max) @ Vgs : 30nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Nguvu - Max : 830mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-TSSOP (0.173", 4.40mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-TSSOP

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