Vishay Siliconix - SI7501DN-T1-E3

KEY Part #: K6523545

[4671pcs Hisa]


    Nambari ya Sehemu:
    SI7501DN-T1-E3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N/P-CH 30V 5.4A 1212-8.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - IGBTs - Moduli and Thyristors - SCR ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI7501DN-T1-E3 electronic components. SI7501DN-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI7501DN-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI7501DN-T1-E3 Sifa za Bidhaa

    Nambari ya Sehemu : SI7501DN-T1-E3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N/P-CH 30V 5.4A 1212-8
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N and P-Channel, Common Drain
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.4A, 4.5A
    Njia ya Kutumia (Max) @ Id, Vgs : 35 mOhm @ 7.7A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 14nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : -
    Nguvu - Max : 1.6W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : PowerPAK® 1212-8 Dual
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8 Dual

    Unaweza pia Kuvutiwa Na