ON Semiconductor - FDMS3660S

KEY Part #: K6522278

FDMS3660S Bei (USD) [179509pcs Hisa]

  • 1 pcs$0.20605
  • 3,000 pcs$0.20099

Nambari ya Sehemu:
FDMS3660S
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET 2N-CH 30V 13A/30A 8-PQFN.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Viwango - Zener - Arrays and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDMS3660S electronic components. FDMS3660S can be shipped within 24 hours after order. If you have any demands for FDMS3660S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS3660S Sifa za Bidhaa

Nambari ya Sehemu : FDMS3660S
Mzalishaji : ON Semiconductor
Maelezo : MOSFET 2N-CH 30V 13A/30A 8-PQFN
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual) Asymmetrical
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 13A, 30A
Njia ya Kutumia (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 2.7V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 29nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1765pF @ 15V
Nguvu - Max : 1W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerTDFN
Kifurushi cha Kifaa cha Mtoaji : Power56

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