Nambari ya Sehemu :
FDMS3660S
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET 2N-CH 30V 13A/30A 8-PQFN
Aina ya FET :
2 N-Channel (Dual) Asymmetrical
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A, 30A
Njia ya Kutumia (Max) @ Id, Vgs :
8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
2.7V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
29nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1765pF @ 15V
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerTDFN
Kifurushi cha Kifaa cha Mtoaji :
Power56