Vishay Siliconix - SI1902DL-T1-E3

KEY Part #: K6522739

SI1902DL-T1-E3 Bei (USD) [518123pcs Hisa]

  • 1 pcs$0.07139
  • 3,000 pcs$0.06069

Nambari ya Sehemu:
SI1902DL-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2N-CH 20V 0.66A SC70-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Rectifiers - Moja, Thyristors - SCR, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI1902DL-T1-E3 electronic components. SI1902DL-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1902DL-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1902DL-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SI1902DL-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2N-CH 20V 0.66A SC70-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 660mA
Njia ya Kutumia (Max) @ Id, Vgs : 385 mOhm @ 660mA, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 1.2nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Nguvu - Max : 270mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SC-70-6 (SOT-363)