BSG0810NDIATMA1 Bei (USD) [83416pcs Hisa]
- 1 pcs$0.46874
- 5,000 pcs$0.46121
- Nambari ya Sehemu:
- BSG0810NDIATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET 2N-CH 25V 19A/39A 8TISON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Moja, Viwango - RF, Viwango - Zener - Arrays, Transistors - IGBTs - Moja, Transistors - Ushirikiano uliopangwa and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSG0810NDIATMA1 electronic components. BSG0810NDIATMA1 can be shipped within 24 hours after order. If you have any demands for BSG0810NDIATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSG0810NDIATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSG0810NDIATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET 2N-CH 25V 19A/39A 8TISON
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Asymmetrical
Makala ya FET :
Logic Level Gate, 4.5V Drive
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
19A, 39A
Njia ya Kutumia (Max) @ Id, Vgs :
3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8.4nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1040pF @ 12V
Nguvu - Max :
2.5W
Joto la Kufanya kazi :
-55°C ~ 155°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerTDFN
Kifurushi cha Kifaa cha Mtoaji :
PG-TISON-8
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