DF23MR12W1M1B11BOMA1 Bei (USD) [998pcs Hisa]
- 1 pcs$46.57521
- Nambari ya Sehemu:
- DF23MR12W1M1B11BOMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET MODULE 1200V 25A.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies DF23MR12W1M1B11BOMA1 electronic components. DF23MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for DF23MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF23MR12W1M1B11BOMA1 Sifa za Bidhaa
Nambari ya Sehemu :
DF23MR12W1M1B11BOMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET MODULE 1200V 25A
Mfululizo :
CoolSiC™
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A
Njia ya Kutumia (Max) @ Id, Vgs :
45 mOhm @ 25A, 15V
Vgs (th) (Max) @ Id :
5.5V @ 10mA
Malango ya Lango (Qg) (Max) @ Vgs :
620nC @ 15V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 800V
Nguvu - Max :
20mW
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
Module
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