SI3585CDV-T1-GE3 Bei (USD) [431769pcs Hisa]
- 1 pcs$0.25707
- 10 pcs$0.21515
- 100 pcs$0.16132
- 500 pcs$0.11830
- 1,000 pcs$0.09141
- Nambari ya Sehemu:
- SI3585CDV-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N/P-CH 20V 3.9A 6TSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Thyristors - SCR, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI3585CDV-T1-GE3 electronic components. SI3585CDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3585CDV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3585CDV-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI3585CDV-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N/P-CH 20V 3.9A 6TSOP
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.9A, 2.1A
Njia ya Kutumia (Max) @ Id, Vgs :
58 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.8nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
150pF @ 10V
Nguvu - Max :
1.4W, 1.3W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
Kifurushi cha Kifaa cha Mtoaji :
6-TSOP
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