Vishay Siliconix - SI4569DY-T1-GE3

KEY Part #: K6524041

[3964pcs Hisa]


    Nambari ya Sehemu:
    SI4569DY-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N/P-CH 40V 7.6A 8-SOIC.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - RF, Viwango - Bridge Rectifiers, Thyristors - SCRs - Moduli, Thyristors - SCR, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Arrays and Transistors - IGBTs - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI4569DY-T1-GE3 electronic components. SI4569DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4569DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4569DY-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SI4569DY-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N/P-CH 40V 7.6A 8-SOIC
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N and P-Channel
    Makala ya FET : Standard
    Kukata kwa Voltage Voltage (Vdss) : 40V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.6A, 7.9A
    Njia ya Kutumia (Max) @ Id, Vgs : 27 mOhm @ 6A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 32nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 855pF @ 20V
    Nguvu - Max : 3.1W, 3.2W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
    Kifurushi cha Kifaa cha Mtoaji : 8-SO