Infineon Technologies - BSC072N03LDGATMA1

KEY Part #: K6525270

BSC072N03LDGATMA1 Bei (USD) [160653pcs Hisa]

  • 1 pcs$0.23023

Nambari ya Sehemu:
BSC072N03LDGATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET 2N-CH 30V 11.5A 8TDSON.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Arrays and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Infineon Technologies BSC072N03LDGATMA1 electronic components. BSC072N03LDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC072N03LDGATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC072N03LDGATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSC072N03LDGATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET 2N-CH 30V 11.5A 8TDSON
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11.5A
Njia ya Kutumia (Max) @ Id, Vgs : 7.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 41nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3500pF @ 15V
Nguvu - Max : 57W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8 Dual