Diodes Incorporated - ZXMN2A04DN8TA

KEY Part #: K6522821

ZXMN2A04DN8TA Bei (USD) [78358pcs Hisa]

  • 1 pcs$0.50150
  • 500 pcs$0.49900

Nambari ya Sehemu:
ZXMN2A04DN8TA
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CH 20V 5.9A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - RF, Viwango - RF, Viwango - Zener - Arrays, Transistors - IGBTs - Moduli and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN2A04DN8TA Sifa za Bidhaa

Nambari ya Sehemu : ZXMN2A04DN8TA
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CH 20V 5.9A 8-SOIC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 5.9A
Njia ya Kutumia (Max) @ Id, Vgs : 25 mOhm @ 5.9A, 4.5V
Vgs (th) (Max) @ Id : 700mV @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs : 22.1nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1880pF @ 10V
Nguvu - Max : 1.8W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SOP