IPG20N10S4L35AATMA1 Bei (USD) [182536pcs Hisa]
- 1 pcs$0.20263
- 5,000 pcs$0.18591
- Nambari ya Sehemu:
- IPG20N10S4L35AATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Arrays and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPG20N10S4L35AATMA1 electronic components. IPG20N10S4L35AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L35AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L35AATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPG20N10S4L35AATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET 2N-CH 8TDSON
Mfululizo :
Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
20A
Njia ya Kutumia (Max) @ Id, Vgs :
35 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 16µA
Malango ya Lango (Qg) (Max) @ Vgs :
17.4nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1105pF @ 25V
Nguvu - Max :
43W
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerVDFN
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8-10
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