Infineon Technologies - IRLHS6376TR2PBF

KEY Part #: K6523955

[3993pcs Hisa]


    Nambari ya Sehemu:
    IRLHS6376TR2PBF
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET 2N-CH 30V 3.6A PQFN.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Arrays and Viwango - Rectifiers - Moja ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies IRLHS6376TR2PBF electronic components. IRLHS6376TR2PBF can be shipped within 24 hours after order. If you have any demands for IRLHS6376TR2PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLHS6376TR2PBF Sifa za Bidhaa

    Nambari ya Sehemu : IRLHS6376TR2PBF
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET 2N-CH 30V 3.6A PQFN
    Mfululizo : HEXFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Logic Level Gate
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.6A
    Njia ya Kutumia (Max) @ Id, Vgs : 63 mOhm @ 3.4A, 4.5V
    Vgs (th) (Max) @ Id : 1.1V @ 10µA
    Malango ya Lango (Qg) (Max) @ Vgs : 2.8nC @ 4.5V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 270pF @ 25V
    Nguvu - Max : 1.5W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 6-VDFN Exposed Pad
    Kifurushi cha Kifaa cha Mtoaji : 6-PQFN (2x2)