Vishay Siliconix - SI4622DY-T1-GE3

KEY Part #: K6524092

[3947pcs Hisa]


    Nambari ya Sehemu:
    SI4622DY-T1-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2N-CH 30V 8A 8-SOIC.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF, Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moduli, Transistors - JFETs and Transistors - IGBTs - Moja ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SI4622DY-T1-GE3 electronic components. SI4622DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4622DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI4622DY-T1-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SI4622DY-T1-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2N-CH 30V 8A 8-SOIC
    Mfululizo : SkyFET®, TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 N-Channel (Dual)
    Makala ya FET : Standard
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8A
    Njia ya Kutumia (Max) @ Id, Vgs : 16 mOhm @ 9.6A, 10V
    Vgs (th) (Max) @ Id : 2.5V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 60nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 2458pF @ 15V
    Nguvu - Max : 3.3W, 3.1W
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
    Kifurushi cha Kifaa cha Mtoaji : 8-SO

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