SQJ262EP-T1_GE3 Bei (USD) [158402pcs Hisa]
- 1 pcs$0.23350
- Nambari ya Sehemu:
- SQJ262EP-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2 N-CH 60V POWERPAK SO8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Kusudi Maalum, Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQJ262EP-T1_GE3 electronic components. SQJ262EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ262EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ262EP-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQJ262EP-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2 N-CH 60V POWERPAK SO8
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
15A (Tc), 40A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
35.5 mOhm @ 2A, 10V, 15.5 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
10nC @ 10V, 23nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
550pF @ 25V, 1260pF @ 25V
Nguvu - Max :
27W (Tc), 48W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SO-8 Dual Asymmetric
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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