Diodes Incorporated - ZXMC3F31DN8TA

KEY Part #: K6522814

ZXMC3F31DN8TA Bei (USD) [216484pcs Hisa]

  • 1 pcs$0.17086
  • 500 pcs$0.15662

Nambari ya Sehemu:
ZXMC3F31DN8TA
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N/P-CH 30V 6.8A/4.9A 8SO.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Moja, Viwango - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Kusudi Maalum, Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Diodes Incorporated ZXMC3F31DN8TA electronic components. ZXMC3F31DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMC3F31DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMC3F31DN8TA Sifa za Bidhaa

Nambari ya Sehemu : ZXMC3F31DN8TA
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N and P-Channel
Makala ya FET : Logic Level Gate, 4.5V Drive
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.8A, 4.9A
Njia ya Kutumia (Max) @ Id, Vgs : 24 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 12.9nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 608pF @ 15V
Nguvu - Max : 1.8W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SO