DMG6601LVT-7 Bei (USD) [953326pcs Hisa]
- 1 pcs$0.03880
- 3,000 pcs$0.03524
- Nambari ya Sehemu:
- DMG6601LVT-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N/P-CH 30V 26TSOT.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMG6601LVT-7 electronic components. DMG6601LVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6601LVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6601LVT-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMG6601LVT-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N/P-CH 30V 26TSOT
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
3.8A, 2.5A
Njia ya Kutumia (Max) @ Id, Vgs :
55 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
12.3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
422pF @ 15V
Nguvu - Max :
850mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
SOT-23-6 Thin, TSOT-23-6
Kifurushi cha Kifaa cha Mtoaji :
TSOT-26
Habari mpya kabisa
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