Diodes Incorporated - ZXMN3A04DN8TA

KEY Part #: K6522816

ZXMN3A04DN8TA Bei (USD) [78588pcs Hisa]

  • 1 pcs$0.49754
  • 500 pcs$0.45071

Nambari ya Sehemu:
ZXMN3A04DN8TA
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CH 30V 6.5A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Diodes Incorporated ZXMN3A04DN8TA electronic components. ZXMN3A04DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3A04DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3A04DN8TA Sifa za Bidhaa

Nambari ya Sehemu : ZXMN3A04DN8TA
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CH 30V 6.5A 8-SOIC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.5A
Njia ya Kutumia (Max) @ Id, Vgs : 20 mOhm @ 12.6A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs : 36.8nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1890pF @ 15V
Nguvu - Max : 1.81W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SOP