Nambari ya Sehemu :
FDMD8900
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET 2N-CH 30V POWER
Aina ya FET :
2 N-Channel (Dual)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
19A, 17A
Njia ya Kutumia (Max) @ Id, Vgs :
4 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
35nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2605pF @ 15V
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
12-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
12-Power3.3x5