SQ4917EY-T1_GE3 Bei (USD) [98339pcs Hisa]
- 1 pcs$0.39761
- 2,500 pcs$0.31715
- Nambari ya Sehemu:
- SQ4917EY-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2 P-CHANNEL 60V 8A 8SO.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli, Thyristors - TRIAC, Transistors - JFETs and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQ4917EY-T1_GE3 electronic components. SQ4917EY-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ4917EY-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ4917EY-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQ4917EY-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2 P-CHANNEL 60V 8A 8SO
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
48 mOhm @ 4.3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
65nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1910pF @ 30V
Nguvu - Max :
5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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