[4671pcs Hisa]
- Nambari ya Sehemu:
- ZXMN2A04DN8TC
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 20V 5.9A 8SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Viwango - Bridge Rectifiers and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated ZXMN2A04DN8TC electronic components. ZXMN2A04DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN2A04DN8TC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN2A04DN8TC Sifa za Bidhaa
Nambari ya Sehemu :
ZXMN2A04DN8TC
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 20V 5.9A 8SOIC
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.9A
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 5.9A, 4.5V
Vgs (th) (Max) @ Id :
700mV @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs :
22.1nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1880pF @ 10V
Nguvu - Max :
1.8W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SOP
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