Microsemi Corporation - APTM100DSK35T3G

KEY Part #: K6522618

APTM100DSK35T3G Bei (USD) [1598pcs Hisa]

  • 1 pcs$27.22101
  • 100 pcs$27.08558

Nambari ya Sehemu:
APTM100DSK35T3G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET 2N-CH 1000V 22A SP3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Transistors - JFETs, Viwango - Rectifiers - Moja and Viwango - Zener - Moja ...
Faida ya Ushindani:
We specialize in Microsemi Corporation APTM100DSK35T3G electronic components. APTM100DSK35T3G can be shipped within 24 hours after order. If you have any demands for APTM100DSK35T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM100DSK35T3G Sifa za Bidhaa

Nambari ya Sehemu : APTM100DSK35T3G
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET 2N-CH 1000V 22A SP3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 1000V (1kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 22A
Njia ya Kutumia (Max) @ Id, Vgs : 420 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs : 186nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5200pF @ 25V
Nguvu - Max : 390W
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : SP3
Kifurushi cha Kifaa cha Mtoaji : SP3