Microsemi Corporation - APTM60H23FT1G

KEY Part #: K6522602

APTM60H23FT1G Bei (USD) [2511pcs Hisa]

  • 1 pcs$17.24630
  • 100 pcs$17.02655

Nambari ya Sehemu:
APTM60H23FT1G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
MOSFET 4N-CH 600V 20A SP1.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC, Thyristors - SCRs - Moduli, Moduli za Dereva za Nguvu, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM60H23FT1G Sifa za Bidhaa

Nambari ya Sehemu : APTM60H23FT1G
Mzalishaji : Microsemi Corporation
Maelezo : MOSFET 4N-CH 600V 20A SP1
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 4 N-Channel (H-Bridge)
Makala ya FET : Standard
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A
Njia ya Kutumia (Max) @ Id, Vgs : 276 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 165nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5316pF @ 25V
Nguvu - Max : 208W
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : SP1
Kifurushi cha Kifaa cha Mtoaji : SP1