Nambari ya Sehemu :
APTMC60TL11CT3AG
Mzalishaji :
Microsemi Corporation
Maelezo :
MOSFET 4N-CH 1200V 28A SP3
Aina ya FET :
4 N-Channel (Three Level Inverter)
Makala ya FET :
Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
28A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
98 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
49nC @ 20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
950pF @ 1000V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SP3