[3791pcs Hisa]
- Nambari ya Sehemu:
- ZXMN3A06DN8TC
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 30V 4.9A 8SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Moja, Transistors - Ushirikiano uliopangwa, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated ZXMN3A06DN8TC electronic components. ZXMN3A06DN8TC can be shipped within 24 hours after order. If you have any demands for ZXMN3A06DN8TC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3A06DN8TC Sifa za Bidhaa
Nambari ya Sehemu :
ZXMN3A06DN8TC
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 30V 4.9A 8SOIC
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.9A
Njia ya Kutumia (Max) @ Id, Vgs :
35 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs :
17.5nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
796pF @ 25V
Nguvu - Max :
1.8W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SOP
Habari mpya kabisa
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