Vishay Siliconix - SI4931DY-T1-E3

KEY Part #: K6522546

SI4931DY-T1-E3 Bei (USD) [195156pcs Hisa]

  • 1 pcs$0.18953
  • 2,500 pcs$0.16019

Nambari ya Sehemu:
SI4931DY-T1-E3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET 2P-CH 12V 6.7A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - Moja, Transistors - JFETs and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI4931DY-T1-E3 electronic components. SI4931DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4931DY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4931DY-T1-E3 Sifa za Bidhaa

Nambari ya Sehemu : SI4931DY-T1-E3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET 2P-CH 12V 6.7A 8-SOIC
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : 2 P-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 12V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.7A
Njia ya Kutumia (Max) @ Id, Vgs : 18 mOhm @ 8.9A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 350µA
Malango ya Lango (Qg) (Max) @ Vgs : 52nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : -
Nguvu - Max : 1.1W
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji : 8-SO