[3977pcs Hisa]
- Nambari ya Sehemu:
- SI5915BDC-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2P-CH 8V 4A 1206-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Viwango - RF, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI5915BDC-T1-GE3 electronic components. SI5915BDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5915BDC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5915BDC-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI5915BDC-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2P-CH 8V 4A 1206-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
8V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A
Njia ya Kutumia (Max) @ Id, Vgs :
70 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
14nC @ 8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
420pF @ 4V
Nguvu - Max :
3.1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SMD, Flat Lead
Kifurushi cha Kifaa cha Mtoaji :
1206-8 ChipFET™
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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