SIS903DN-T1-GE3 Bei (USD) [201147pcs Hisa]
- 1 pcs$0.18388
- Nambari ya Sehemu:
- SIS903DN-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET DUAL P-CHAN POWERPAK 1212.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - RF, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIS903DN-T1-GE3 electronic components. SIS903DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS903DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS903DN-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIS903DN-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET DUAL P-CHAN POWERPAK 1212
Mfululizo :
TrenchFET® Gen III
Hali ya Sehemu :
Active
Aina ya FET :
2 P-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
20.1 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
42nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2565pF @ 10V
Nguvu - Max :
2.6W (Ta), 23W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® 1212-8 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® 1212-8 Dual
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