Nambari ya Sehemu :
APTMC120HR11CT3AG
Mzalishaji :
Microsemi Corporation
Maelezo :
POWER MODULE - SIC MOSFET
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
26A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
98 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
3V @ 5mA
Malango ya Lango (Qg) (Max) @ Vgs :
62nC @ 20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
950pF @ 1000V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Module
Kifurushi cha Kifaa cha Mtoaji :
SP3