DMG8601UFG-7 Bei (USD) [438799pcs Hisa]
- 1 pcs$0.08471
- 3,000 pcs$0.08429
- Nambari ya Sehemu:
- DMG8601UFG-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 20V 6.1A DFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Thyristors - SCR, Transistors - Kusudi Maalum and Transistors - FET, MOSFETs - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMG8601UFG-7 electronic components. DMG8601UFG-7 can be shipped within 24 hours after order. If you have any demands for DMG8601UFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG8601UFG-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMG8601UFG-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 20V 6.1A DFN
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Common Drain
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6.1A
Njia ya Kutumia (Max) @ Id, Vgs :
23 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ Id :
1.05V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8.8nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
143pF @ 10V
Nguvu - Max :
920mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerUDFN
Kifurushi cha Kifaa cha Mtoaji :
U-DFN3030-8
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