SIZ328DT-T1-GE3 Bei (USD) [229895pcs Hisa]
- 1 pcs$0.16089
- Nambari ya Sehemu:
- SIZ328DT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET DUAL N-CHAN 25V POWERPAIR.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Arrays, Transistors - FET, MOSFETs - Moja and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIZ328DT-T1-GE3 electronic components. SIZ328DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ328DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ328DT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIZ328DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET DUAL N-CHAN 25V POWERPAIR
Mfululizo :
TrenchFET® Gen IV
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
15 mOhm @ 5A, 10V, 10 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
6.9nC @ 10V, 11.3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
325pF @ 10V, 600pF @ 10V
Nguvu - Max :
2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-Power33 (3x3)
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