SI7998DP-T1-GE3 Bei (USD) [123967pcs Hisa]
- 1 pcs$0.29837
- 3,000 pcs$0.28017
- Nambari ya Sehemu:
- SI7998DP-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET 2N-CH 30V 25A PPAK SO-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Thyristors - SCR, Viwango - RF, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays and Thyristors - TRIAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI7998DP-T1-GE3 electronic components. SI7998DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7998DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7998DP-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI7998DP-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET 2N-CH 30V 25A PPAK SO-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A, 30A
Njia ya Kutumia (Max) @ Id, Vgs :
9.3 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
26nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 15V
Nguvu - Max :
22W, 40W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
PowerPAK® SO-8 Dual
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SO-8 Dual
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