Nambari ya Sehemu :
SI4178DY-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 30V 12A 8-SOIC
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
21 mOhm @ 8.4A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
405pF @ 15V
Kuondoa Nguvu (Max) :
2.4W (Ta), 5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-SO
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)