Vishay Siliconix - SI4686DY-T1-GE3

KEY Part #: K6419711

SI4686DY-T1-GE3 Bei (USD) [126722pcs Hisa]

  • 1 pcs$0.29188
  • 2,500 pcs$0.27408

Nambari ya Sehemu:
SI4686DY-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 30V 18.2A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI4686DY-T1-GE3 electronic components. SI4686DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4686DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4686DY-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI4686DY-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 30V 18.2A 8-SOIC
Mfululizo : TrenchFET®, WFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 9.5 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1220pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3W (Ta), 5.2W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SO
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)