IXYS - IXTQ200N06P

KEY Part #: K6416327

IXTQ200N06P Bei (USD) [13616pcs Hisa]

  • 1 pcs$3.34584
  • 30 pcs$3.32919

Nambari ya Sehemu:
IXTQ200N06P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 60V 200A TO-3P.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers and Transistors - IGBTs - Arrays ...
Faida ya Ushindani:
We specialize in IXYS IXTQ200N06P electronic components. IXTQ200N06P can be shipped within 24 hours after order. If you have any demands for IXTQ200N06P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTQ200N06P Sifa za Bidhaa

Nambari ya Sehemu : IXTQ200N06P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 60V 200A TO-3P
Mfululizo : PolarHT™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 200A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 5 mOhm @ 400A, 15V
Vgs (th) (Max) @ Id : 5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 200nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5400pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 714W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-3P
Kifurushi / Kesi : TO-3P-3, SC-65-3