Vishay Siliconix - SI1469DH-T1-GE3

KEY Part #: K6421080

SI1469DH-T1-GE3 Bei (USD) [344842pcs Hisa]

  • 1 pcs$0.10726
  • 3,000 pcs$0.10093

Nambari ya Sehemu:
SI1469DH-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 20V 2.7A SC-70-6.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Thyristors - SCR, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI1469DH-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI1469DH-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 20V 2.7A SC-70-6
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 2.7A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 80 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 8.5nC @ 4.5V
Vgs (Max) : ±12V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 470pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1.5W (Ta), 2.78W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SC-70-6 (SOT-363)
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363