SSR1N60BTM-WS Bei (USD) [367383pcs Hisa]
- 1 pcs$0.10068
- Nambari ya Sehemu:
- SSR1N60BTM-WS
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 600V 0.9A DPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor SSR1N60BTM-WS electronic components. SSR1N60BTM-WS can be shipped within 24 hours after order. If you have any demands for SSR1N60BTM-WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSR1N60BTM-WS Sifa za Bidhaa
Nambari ya Sehemu :
SSR1N60BTM-WS
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 600V 0.9A DPAK
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
900mA (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
12 Ohm @ 450mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
215pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.5W (Ta), 28W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-Pak
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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