SIZ350DT-T1-GE3 Bei (USD) [174547pcs Hisa]
- 1 pcs$0.21190
- Nambari ya Sehemu:
- SIZ350DT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET DUAL N-CHAN 30V POWERPAIR.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Viwango - Rectifiers - Arrays, Viwango - Bridge Rectifiers, Thyristors - SCRs - Moduli, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIZ350DT-T1-GE3 electronic components. SIZ350DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ350DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ350DT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIZ350DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET DUAL N-CHAN 30V POWERPAIR
Mfululizo :
TrenchFET® Gen IV
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
18.5A (Ta), 30A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
6.75 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
20.3nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
940pF @ 15V
Nguvu - Max :
3.7W (Ta), 16.7W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-Power33 (3x3)
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