DMT10H017LPD-13 Bei (USD) [113872pcs Hisa]
- 1 pcs$0.32482
- Nambari ya Sehemu:
- DMT10H017LPD-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET BVDSS 61V-100V POWERDI50.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMT10H017LPD-13 electronic components. DMT10H017LPD-13 can be shipped within 24 hours after order. If you have any demands for DMT10H017LPD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H017LPD-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMT10H017LPD-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET BVDSS 61V-100V POWERDI50
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
54.7A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
17.4 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
28.6nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1986pF @ 50V
Nguvu - Max :
2.2W (Ta), 78W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerTDFN
Kifurushi cha Kifaa cha Mtoaji :
PowerDI5060-8
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