DMG8822UTS-13 Bei (USD) [446296pcs Hisa]
- 1 pcs$0.08288
- 2,500 pcs$0.04307
- Nambari ya Sehemu:
- DMG8822UTS-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 20V 4.9A 8TSSOP.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMG8822UTS-13 electronic components. DMG8822UTS-13 can be shipped within 24 hours after order. If you have any demands for DMG8822UTS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG8822UTS-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMG8822UTS-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 20V 4.9A 8TSSOP
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual) Common Drain
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4.9A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs :
25 mOhm @ 8.2A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
9.6nC @ 4.5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
841pF @ 10V
Nguvu - Max :
870mW
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-TSSOP (0.173", 4.40mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-TSSOP
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