Diodes Incorporated - DMN3190LDW-13

KEY Part #: K6522500

DMN3190LDW-13 Bei (USD) [1192875pcs Hisa]

  • 1 pcs$0.03101
  • 10,000 pcs$0.02784

Nambari ya Sehemu:
DMN3190LDW-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET 2N-CH 30V 1A SOT363.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Ushirikiano uliopangwa, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - IGBTs - Moduli, Transistors - JFETs and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMN3190LDW-13 electronic components. DMN3190LDW-13 can be shipped within 24 hours after order. If you have any demands for DMN3190LDW-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN3190LDW-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN3190LDW-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET 2N-CH 30V 1A SOT363
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1A
Njia ya Kutumia (Max) @ Id, Vgs : 190 mOhm @ 1.3A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 2nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 87pF @ 20V
Nguvu - Max : 320mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 6-TSSOP, SC-88, SOT-363
Kifurushi cha Kifaa cha Mtoaji : SOT-363