SI5513CDC-T1-GE3 Bei (USD) [383787pcs Hisa]
- 1 pcs$0.09638
- 3,000 pcs$0.09104
- Nambari ya Sehemu:
- SI5513CDC-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N/P-CH 20V 4A 1206-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Ushirikiano uliopangwa and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI5513CDC-T1-GE3 electronic components. SI5513CDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5513CDC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5513CDC-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI5513CDC-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N/P-CH 20V 4A 1206-8
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N and P-Channel
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
4A, 3.7A
Njia ya Kutumia (Max) @ Id, Vgs :
55 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
4.2nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
285pF @ 10V
Nguvu - Max :
3.1W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SMD, Flat Lead
Kifurushi cha Kifaa cha Mtoaji :
1206-8 ChipFET™
Habari mpya kabisa
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