IXYS - IXFX12N90Q

KEY Part #: K6408940

IXFX12N90Q Bei (USD) [6693pcs Hisa]

  • 1 pcs$6.77356

Nambari ya Sehemu:
IXFX12N90Q
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 900V 12A PLUS247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Transistors - Kusudi Maalum, Viwango - RF, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in IXYS IXFX12N90Q electronic components. IXFX12N90Q can be shipped within 24 hours after order. If you have any demands for IXFX12N90Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX12N90Q Sifa za Bidhaa

Nambari ya Sehemu : IXFX12N90Q
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 900V 12A PLUS247
Mfululizo : HiPerFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 900V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 900 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Malango ya Lango (Qg) (Max) @ Vgs : 90nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2900pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 300W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PLUS247™-3
Kifurushi / Kesi : TO-247-3