[12682pcs Hisa]
- Nambari ya Sehemu:
- IRF7523D1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 30V 2.7A MICRO-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Thyristors - SCR and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF7523D1 electronic components. IRF7523D1 can be shipped within 24 hours after order. If you have any demands for IRF7523D1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7523D1 Sifa za Bidhaa
Nambari ya Sehemu :
IRF7523D1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 30V 2.7A MICRO-8
Mfululizo :
FETKY™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.7A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
130 mOhm @ 1.7A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
210pF @ 25V
Makala ya FET :
Schottky Diode (Isolated)
Kuondoa Nguvu (Max) :
1.25W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Micro8™
Kifurushi / Kesi :
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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