IXYS - IXCY01N90E

KEY Part #: K6408898

[468pcs Hisa]


    Nambari ya Sehemu:
    IXCY01N90E
    Mzalishaji:
    IXYS
    Maelezo ya kina:
    MOSFET N-CH 900V 0.25A TO-252.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - RF, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF, Thyristors - SCR and Moduli za Dereva za Nguvu ...
    Faida ya Ushindani:
    We specialize in IXYS IXCY01N90E electronic components. IXCY01N90E can be shipped within 24 hours after order. If you have any demands for IXCY01N90E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXCY01N90E Sifa za Bidhaa

    Nambari ya Sehemu : IXCY01N90E
    Mzalishaji : IXYS
    Maelezo : MOSFET N-CH 900V 0.25A TO-252
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 900V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 250mA (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 80 Ohm @ 50mA, 10V
    Vgs (th) (Max) @ Id : 5V @ 25µA
    Malango ya Lango (Qg) (Max) @ Vgs : 7.5nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 133pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 40W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : TO-252
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63