[8625pcs Hisa]
- Nambari ya Sehemu:
- IPI80CN10N G
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 13A TO262-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPI80CN10N G electronic components. IPI80CN10N G can be shipped within 24 hours after order. If you have any demands for IPI80CN10N G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI80CN10N G Sifa za Bidhaa
Nambari ya Sehemu :
IPI80CN10N G
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 13A TO262-3
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
13A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
80 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 12µA
Malango ya Lango (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
716pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
31W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO262-3
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA
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