Infineon Technologies - SPP08N50C3XKSA1

KEY Part #: K6413196

SPP08N50C3XKSA1 Bei (USD) [13183pcs Hisa]

  • 1 pcs$0.79857

Nambari ya Sehemu:
SPP08N50C3XKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 560V 7.6A TO-220AB.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays, Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPP08N50C3XKSA1 Sifa za Bidhaa

Nambari ya Sehemu : SPP08N50C3XKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 560V 7.6A TO-220AB
Mfululizo : CoolMOS™
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 560V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 600 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 350µA
Malango ya Lango (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 750pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO220-3-1
Kifurushi / Kesi : TO-220-3